Experiment: Field effect transistors (115 V 50/60 Hz)

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Objective: Measure the characteristics of a field effect transistor A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts called source drain and gate due to their respective functions. If a voltage is applied between the source and the drain then a drain current flows between the two. For small voltages between the drain and source an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source drain voltage increases the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non zero the saturation value of the drain current decreases.

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